Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: Their possibility of high electron mobility transistor

被引：0
|
作者：
Yamaguchi, S
Kosaki, M
Watanabe, Y
Mochizuki, S
Nakamura, T
Yukawa, Y
Nitta, S
Amano, H
Akasaki, I
机构：
[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200112)188:2<895::AID-PSSA895>3.0.CO;2-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al0.90In0.10N/GaN, AlN/GaN and their superlattices (SLs) grown on GaN by metalorganic vapor phase epitaxy (MOVPE) were studied. A (0001) sapphire substrate was used. X-ray diffraction analysis of 2 theta/omega scans and reciprocal space mapping showed that the samples were coherently grown on GaN, and in particular, crack-free AIN of 0.5 jun thickness was grown on GaN. Al0.90In0.10N/GaN (or AlN/GaN) SLs grown on GaN showed a maximum electron mobility of 946 (or 1422) cm(2)/Vs at room temperature and a nominal sheet carrier density of 2.9 x 10(12) (or 7.5 x 10(12)) cm(-2).
引用
收藏
页码：895 / 898
页数：4
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