Crystal growth of high-quality AlInN/GaN superlattices and of crack-free AlN on GaN: Their possibility of high electron mobility transistor

被引：0
|
作者：
Yamaguchi, S
Kosaki, M
Watanabe, Y
Mochizuki, S
Nakamura, T
Yukawa, Y
Nitta, S
Amano, H
Akasaki, I
机构：
[1] Meijo Univ, High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[3] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2001年 / 188卷 / 02期
关键词：
D O I：
10.1002/1521-396X(200112)188:2<895::AID-PSSA895>3.0.CO;2-G
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Al0.90In0.10N/GaN, AlN/GaN and their superlattices (SLs) grown on GaN by metalorganic vapor phase epitaxy (MOVPE) were studied. A (0001) sapphire substrate was used. X-ray diffraction analysis of 2 theta/omega scans and reciprocal space mapping showed that the samples were coherently grown on GaN, and in particular, crack-free AIN of 0.5 jun thickness was grown on GaN. Al0.90In0.10N/GaN (or AlN/GaN) SLs grown on GaN showed a maximum electron mobility of 946 (or 1422) cm(2)/Vs at room temperature and a nominal sheet carrier density of 2.9 x 10(12) (or 7.5 x 10(12)) cm(-2).
引用
收藏
页码：895 / 898
页数：4
相关论文
共 50 条
  • [1] Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
    Yamaguchi, S
    Kosaki, M
    Watanabe, Y
    Yukawa, Y
    Nitta, S
    Amano, H
    Akasaki, I
    APPLIED PHYSICS LETTERS, 2001, 79 (19) : 3062 - 3064
  • [2] Research and progress of AlInN/GaN high electron mobility transistor
    Xie, Sheng
    Feng, Zhi-Hong
    Liu, Bo
    Mao, Lu-Hong
    Zhang, Shi-Lin
    Gongneng Cailiao/Journal of Functional Materials, 2011, 42 (SUPPL. 5): : 784 - 787
  • [3] High-temperature AlN interlayer for crack-free AlGaN growth on GaN
    Sun, Qian
    Wang, Jianteng
    Wang, Hui
    Jin, Ruiqin
    Jiang, Desheng
    Zhu, Jianjun
    Zhao, Degang
    Yang, Hui
    Zhou, Shengqiang
    Wu, Mingfang
    Smeets, Dries
    Vantomme, Andre
    JOURNAL OF APPLIED PHYSICS, 2008, 104 (04)
  • [4] High-quality and high-mobility AlInN/GaN superlattices grown by metalorganic vapor phase epitaxy
    Yamaguchi, S
    Iwamura, Y
    Kosaki, M
    Watanabe, Y
    Mochizuki, S
    Nakamura, T
    Yukawa, Y
    Nitta, S
    Kamiyama, S
    Amano, H
    Akasaki, I
    COMPOUND SEMICONDUCTORS 2001, 2002, (170): : 813 - 817
  • [5] Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
    Saidi, I.
    Mejri, H.
    Baira, M.
    Maaref, H.
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 84 : 113 - 125
  • [6] GaN/AlN superlattice high electron mobility transistor heterostructures on GaN/Si(111)
    Wosko, Mateusz
    Paszkiewicz, Bogdan
    Vincze, Andrej
    Szymanski, Tomasz
    Paszkiewicz, Regina
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05): : 1195 - 1200
  • [7] Origin of the Kink Effect in AlInN/GaN High Electron-Mobility Transistor
    Khade, Ramdas P.
    Sarkar, Sujan
    DasGupta, Amitava
    DasGupta, Nandita
    JOURNAL OF APPLIED PHYSICS, 2021, 130 (20)
  • [8] High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer
    Lin, Yunhao
    Yang, Meijuan
    Wang, Wenliang
    Lin, Zhiting
    Gao, Junning
    Li, Guoqiang
    CRYSTENGCOMM, 2016, 18 (14): : 2446 - 2454
  • [9] MOCVD growth of high quality crack-free GaN on Si(III) substrates
    Zhang, BS
    Zhu, JJ
    Wang, YT
    Yang, H
    PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM, 2003, : 36 - 39
  • [10] Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy
    Haffouz, S.
    Tang, H.
    Rolfe, S.
    Bardwell, J. A.
    APPLIED PHYSICS LETTERS, 2006, 88 (25)
12345