Low-temperature grown graphene films by using molecular beam epitaxy

被引：26

作者：

Lin, Meng-Yu ^{[1
,2
]}

Guo, Wei-Ching ^{[3
]}

Wu, Meng-Hsun ^{[4
]}

Wang, Pro-Yao ^{[3
]}

Liu, Te-Huan ^{[5
]}

Pao, Chun-Wei ^{[2
]}

Chang, Chien-Cheng ^{[5
]}

Lee, Si-Chen ^{[1
]}

Lin, Shih-Yen ^{[2
]}

机构：

[1] Natl Taiwan Univ, Inst Elect, Taipei 10764, Taiwan

[2] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

[3] Natl Taiwan Ocean Univ, Inst Optoelect Sci, Keelung, Taiwan

[4] Natl Chiao Tung Univ, Coll Photon, Tainan, Taiwan

[5] Natl Taiwan Univ, Inst Appl Mech, Taipei, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 22期

关键词：

CHEMICAL-VAPOR-DEPOSITION; LARGE-AREA; COPPER FOILS;

D O I：

10.1063/1.4768948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 degrees C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768948]

引用

页数：4

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