Manufacture and Study of Switch p-n-Junctions for Cascade Photovoltaic Cells

被引：1
|
作者：
Levin, R. V. [1 ]
Marichev, A. E. [1 ]
Kontrosh, E. V. [1 ]
Prasolov, N. D. [1 ]
Kalinovskii, V. S. [1 ]
Pushnyi, B. V. [1 ]
机构：
[1] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
TECHNICAL PHYSICS LETTERS | 2018年 / 44卷 / 12期
基金：
俄罗斯科学基金会;
关键词：
D O I：
10.1134/S1063785018120490
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Some results of studies on the creation of new junction elements for application in monolithic multijunction InP based photovoltaic cells are presented. A new type of junction elements with a specific ohmic resistance of less than 2 m cm(2) within a range of current densities of up to 700 A/cm(2) is presented as an alternative to tunnel junctions.
引用
收藏
页码：1130 / 1132
页数：3
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