Accurate temperature dependent noise models of microwave transistors based on neural networks

被引：0
|
作者：
Marinkovic, Zlatica [1 ]
Markovic, Vera [1 ]
机构：
[1] Univ Nis, Fac Elect Engn, Nish 18000, Serbia Monteneg
来源：
GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings | 2005年
关键词：
PARAMETERS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently, authors have proposed neural networks for modelling the temperature dependences of elements and parameters of microwave transistor small-signal equivalent circuit including noise. This neural model enables the prediction of modelled device noise parameters for any operating temperature. In this paper, an improvement of the neural model accuracy is proposed. It is done by using an additional neural network aimed to correct the noise parameters' values.
引用
收藏
页码：389 / 392
页数：4
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