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Goos-Hanchen and Imbert-Fedorov shifts at the interface of ordinary dielectric and topological insulator
被引:32
|作者:
Liu, Fen
[1
,2
]
Xu, Jingping
[1
]
Song, Ge
[1
]
Yang, Yaping
[1
]
机构:
[1] Tongji Univ, Sch Phys Sci & Engn, Shanghai 200092, Peoples R China
[2] Shandong Univ, Sch Space Sci & Phys, Weihai 264209, Shandong, Peoples R China
基金:
美国国家科学基金会;
关键词:
TOTAL INTERNAL-REFLECTION;
BEAM;
LIGHT;
ELECTRODYNAMICS;
D O I:
10.1364/JOSAB.30.001167
中图分类号:
O43 [光学];
学科分类号:
070207 ;
0803 ;
摘要:
Using Yasumoto and Oishi's energy flux method, we evaluated the Goos-Hanchen (GH) and Imbert-Fedorov (IF) shifts of beam incident from the ordinary dielectric upon the topological insulator (TI) with totally internal reflection. Comparing with the case of two ordinary isotropic dielectrics, it is found that the topological parameter T of TI can affect two shifts. More important, IF shift appears even for a linear polarized TE or TM beam and achieves the maximum with elliptical polarization, which completely originates from the TI's intrinsic magnetoelectric coupling effect. This observation provides an optical experimental approach to determine the topological parameters T and provide a new way to control the GH shift and IF shift. (C) 2013 Optical Society of America
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页码:1167 / 1172
页数:6
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