Self-organized semiconductor nanostructures: shape, strain and composition

被引：7
|
作者：
Stangl, J
Holy, V
Springholz, G
Bauer, G
Kegel, I
Metzger, TH
机构：
[1] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria
[2] Univ Munich, Sekt Phys, D-80539 Munich, Germany
[3] Univ Munich, CENS, D-80539 Munich, Germany
来源：
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS | 2002年 / 19卷 / 1-2期
关键词：
quantum dots and islands; X-ray diffraction; grazing incidence diffraction; GISAXS;
D O I：
10.1016/S0928-4931(01)00415-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An overview on various X-ray scattering and diffraction techniques is presented, from which information on the shape and size of quantum dots and wires, their composition and strain state can be obtained. These methods are described and applied to studies of InAs, PbSe and Ge-based nanostructures. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码：349 / 358
页数：10
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