Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

被引：6

作者：

Fu, Qiang ^{[1
]}

Zhang, Bo ^{[1
]}

Luo, Xiaorong ^{[1
]}

Wang, Zhigang ^{[1
]}

Li, Zhaoji ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

MICRO & NANO LETTERS | 2013年 / 8卷 / 07期

基金：

中国国家自然科学基金;

关键词：

cathodes; elemental semiconductors; insulated gate bipolar transistors; silicon; silicon-on-insulator; small-sized silicon-on-insulator lateral insulated gate bipolar transistor; forward bias safe operating area; silicon-on-insulator substrate; lowly doped p-type pillar; drift region; vertical doping termination technology; p-pillar layer; electric field reshaping; y-direction; current flow lines; cathode; deep-oxide trench silicon-on-insulator lateral insulated gate bipolar transistor; forward voltage drop; turnoff energy loss; Si; IGBT; TECHNOLOGY; LDMOS; OXIDE;

D O I：

10.1049/mnl.2013.0040

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This Letter presents a novel small-sized lateral insulated gate bipolar transistor on silicon-on-insulator substrate (SOI-LIGBT), which features a lowly doped p-type pillar alongside the oxide trench in the drift region. The variation in vertical doping termination technology is also proposed for the first time. The p-pillar layer leads to electric field reshaping in the y-direction, and homogenises current flow lines under the gate and cathode. It results in a very wide forward bias safe operating area (FBSOA) for the proposed SOI-LIGBT, which is obviously improved by over 50% compared with the deep-oxide trench SOI-LIGBT (DT SOI-LIGBT). Moreover, at the same forward voltage drop of 1 V, the turnoff energy loss for the proposed SOI-LIGBT is reduced by 28.5 and 81.2% compared with those of DT SOI-LIGBT and the conventional SOI-LIGBT, respectively.

引用

页码：386 / 389

页数：4