Performance and Properties of Ultra-Thin Silicon Nitride X-ray Windows

被引：13

作者：

Torma, Pekka T. ^{[1
]}

Kostamo, Jari ^{[1
]}

Sipila, Heikki ^{[1
]}

Mattila, Marco ^{[1
,2
]}

Kostamo, Pasi ^{[1
]}

Kostamo, Esa ^{[1
]}

Lipsanen, Harri ^{[2
]}

Laubis, Christian ^{[3
]}

Scholze, Frank ^{[3
]}

Nelms, Nick ^{[4
]}

Shortt, Brian ^{[4
]}

Bavdaz, Marcos ^{[4
]}

机构：

[1] HS Foils Oy, Espoo 02150, Finland

[2] Aalto Univ, Dept Micro & Nanosci, Micronova, Aalto 00076, Finland

[3] Phys Tech Bundesanstalt, D-10587 Berlin, Germany

[4] ESA ESTEC, NL-2200 AG Noordwijk, Netherlands

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 01期

关键词：

Optical films; space technology; X-ray applications; X-ray detectors; X-ray filters; X-ray windows; CHEMICAL-VAPOR-DEPOSITION; SYNCHROTRON-RADIATION; HIGH-RESOLUTION; EUV METROLOGY; DIAMOND; PTB; ABSORPTION; DETECTORS; OPTICS; FILMS;

D O I：

10.1109/TNS.2014.2298434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The spectral transmittance of a new generation of SiN based X-ray windows is characterized. The windows are strengthened by low aspect-ratio support grid. As expected for this unprecedented thin window material, the transmittance in the soft X-ray spectral region outperforms the present technologies. A detailed study of the various performance properties of the fabricated SiN X-ray windows is presented. Besides their high transmittance, the windows also have high uniformity, high mechanical strength and good leak tightness. The windows can withstand temperatures from cryogenic range to approximately 250 degrees C. SiN foils are the first real nanotechnology-based choice for the practical realization of X-ray windows and bring the performance to a level that only nanotechnology can offer.

引用

页码：695 / 699

页数：5

共 50 条

[1] Ultra-Thin Silicon Nitride X-Ray Windows
Torma, Pekka T.
Sipila, Heikki J.
Mattila, Marco
Kostamo, Pasi
Kostamo, Jari
Kostamo, Esa
Lipsanen, Harri
Nelms, Nick
Shortt, Brian
Bavdaz, Marcos
Laubis, Christian
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (02) : 1311 - 1314
[2] Properties of ultra-thin thermal silicon nitride
Buchheit, KM
Takeuchi, H
King, TJ
FUNDAMENTALS OF NOVEL OXIDE/SEMICONDUCTOR INTERFACES, 2004, 786 : 117 - 122
[3] Ultra-thin oxide growth on silicon during 10 keV x-ray irradiation
Bhandaru, S.
Zhang, E. X.
Fleetwood, D. M.
Reed, R. A.
Weller, R. A.
Harl, R. R.
Rogers, B. R.
Weiss, S. M.
SURFACE SCIENCE, 2015, 635 : 49 - 54
[4] Approaching intrinsic performance in ultra-thin silicon nitride drum resonators
Adiga, V. P.
Ilic, B.
Barton, R. A.
Wilson-Rae, I.
Craighead, H. G.
Parpia, J. M.
JOURNAL OF APPLIED PHYSICS, 2012, 112 (06)
[5] PREPARATION OF THIN WINDOWS IN SILICON MASKS FOR X-RAY LITHOGRAPHY
SCHMIDT, CJ
LENZO, PV
SPENCER, EG
JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 4080 - 4082
[6] An X-ray photoelectron spectroscopy study of ultra-thin oxynitride films
Ladas, S.
Sygellou, L.
Kennou, S.
Wolf, M.
Roeder, G.
Nutsch, A.
Rambach, M.
Lerch, W.
THIN SOLID FILMS, 2011, 520 (02) : 871 - 875
[7] X-ray studies of ultra-thin Si wafers for mirror application
Sass, J.
Mazur, K.
Surma, B.
Eichhorn, F.
Litwin, D.
Galas, J.
Sitarek, S.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 236 - 240
[8] Ultra-thin freestanding diamond window for soft X-ray optics
Ying, XT
Luo, JL
Wang, PN
Cui, MQ
Zhao, YD
Li, G
Zhu, PP
DIAMOND AND RELATED MATERIALS, 2003, 12 (3-7) : 719 - 722
[9] X-RAY STANDING WAVES IN LSM FOR CHARACTERIZATION OF ULTRA-THIN FILMS
ZHELUDEVA, SI
KOVALCHUK, MV
NOVIKOVA, NN
SOSPHENOV, AN
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (4A) : A206 - A209
[10] X-ray diffraction analysis of YBaCuO ultra-thin film growth
Linker, G
Huttner, D
Meyer, O
Ohkubo, M
Reiner, J
JOURNAL OF ALLOYS AND COMPOUNDS, 1997, 251 (1-2) : 65 - 69

← 1 2 3 4 5 →