Computer simulation of three-layer systems based on ferromagnetic nanofilms

被引:2
|
作者
Belim, S., V [1 ,2 ]
Larionov, I. B.
机构
[1] Omsk State Tech Univ, 11 Mira Ave, Omsk 644050, Russia
[2] Siberian State Automobile & Highway Univ, 5 Mira Ave, Omsk, Russia
关键词
MAGNETORESISTANCE; MODEL; BEHAVIOR; FILMS;
D O I
10.1088/1742-6596/1546/1/012111
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
Computer modeling of magnetization behavior of thin ferromagnetic Ising films separated by antiferromagnetic film was carried out. Metropolis 's algorithm was used for the simulation. Finite-dimensional scaling theory has been used. Phase transition temperatures were determined by Binder cummulants. Systems with different number of layers in ferromagnetic and antiferromagnetic film have been investigated. Temperatures of phase transitions in ferromagnetic and antiferromagnetic films are determined. A phase diagram of the system has been constructed. There are four phases on the phase diagram. Phase for implementation the spintronic devices is defined. The distribution of magnetization and chess magnetization across the layers of the system in different phases has been investigated.
引用
收藏
页数:7
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