Valence band spectroscopy in V-grooved quantum wires

被引:35
|
作者
Goldoni, G
Rossi, F
Molinari, E
Fasolino, A
Rinaldi, R
Cingolani, R
机构
[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
[2] CATHOLIC UNIV NIJMEGEN,INST THEORET PHYS,NL-6525 ED NIJMEGEN,NETHERLANDS
[3] IST NAZL FIS MAT,I-73100 LECCE,ITALY
[4] UNIV LECCE,DIPARTIMENTO SCI MAT,I-73100 LECCE,ITALY
关键词
D O I
10.1063/1.117745
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present a combined theoretical and experimental study of the anisotropy in the optical absorption of V-shaped quantum wires. By means of realistic band structure calculations for these structures, we show that detailed information on the heavy- and light-hole states can be singled out from the anisotropy spectra independently of the electron confinement, thus allowing accurate valence band spectroscopy. (C) 1996 American Institute of Physics.
引用
收藏
页码:2965 / 2967
页数:3
相关论文
共 50 条
  • [21] V-grooved quantum wires as prototypes of 1D-systems: Single particle properties and correlation effects
    Rossi, F
    Molinari, E
    Rinaldi, R
    Cingolani, R
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 249 - 255
  • [22] Self-limiting OMCVD growth of GaAs on V-grooved substrates with application to InGaAs/GaAs quantum wires
    Biasiol, G
    Reinhardt, F
    Gustafsson, A
    Kapon, E
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (10) : 1194 - 1198
  • [23] Self-limiting OMCVD growth of GaAs on V-grooved substrates with application to InGaAs/GaAs quantum wires
    Giorgio Biasiol
    Frank Reinhardt
    Anders Gustafsson
    Eli Kapon
    Journal of Electronic Materials, 1997, 26 : 1194 - 1198
  • [24] Origin of disorder in self-ordered GaAs/AlGaAs quantum wires grown by OMVPE on V-grooved substrate
    Lelarge, F
    Otterburg, T
    Oberli, DY
    Rudra, A
    Kapon, E
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) : 551 - 555
  • [25] Molecular beam epitaxial growth of InGaAs/InGaAsP quantum wires on V-grooved InP substrates with (111) sidewalls
    Wang, J
    Thompson, DA
    Robinson, BJ
    Simmons, JG
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 793 - 798
  • [26] RESHARPENING EFFECT OF ALAS AND FABRICATION OF QUANTUM-WIRES ON V-GROOVED SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    SHEN, XQ
    TANAKA, M
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 932 - 936
  • [27] V-grooved GaAs/AlGaAs quantum wires with side wall quantum wells intermixed by pulsed anodization and rapid thermal annealing
    Kim, Y
    Yuan, S
    Leon, R
    Clark, A
    Jagadish, C
    Johnston, MB
    Burke, P
    Gal, M
    Zou, J
    Cockayne, D
    Phillips, MR
    Kalceff, MAS
    1996 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES, PROCEEDINGS, 1996, : 200 - 203
  • [28] Carrier transfer between V-grooved quantum wire and vertical quantum well
    Lu, W
    Liu, XQ
    Li, ZF
    Shen, SC
    Zhao, QX
    Fu, Y
    Willander, M
    Tan, HH
    Jagadish, C
    Zou, J
    Cockayne, DJH
    PHYSICS LETTERS A, 2001, 280 (1-2) : 77 - 80
  • [29] Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy
    Sugaya, T
    Nakagawa, T
    Sugiyama, Y
    Tanuma, Y
    Yonei, K
    JOURNAL OF CRYSTAL GROWTH, 1998, 186 (1-2) : 27 - 32
  • [30] Effects of As2 flux for fabrication of GaAs/AlGaAs quantum wires on V-grooved substrates in molecular beam epitaxy
    Electrotechnical Lab, Ibaraki, Japan
    J Cryst Growth, 1-2 (27-32):