Optical characterization of InAs quantum wells and dots grown radially on wurtzite InP nanowires

被引:11
|
作者
Lindgren, David [1 ]
Kawaguchi, Kenichi [1 ,2 ]
Heurlin, Magnus [1 ]
Borgstrom, Magnus T. [1 ]
Pistol, Mats-Erik [1 ]
Samuelson, Lars [1 ]
Gustafsson, Anders [1 ]
机构
[1] Lund Univ, Solid State Phys & Nanometer Struct Consortium, SE-22100 Lund, Sweden
[2] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan
基金
瑞典研究理事会;
关键词
D O I
10.1088/0957-4484/24/22/225203
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Correlated micro-photoluminescence (mu PL) and cathodoluminescence (CL) measurements are reported for single core-shell InP-InAs wurtzite nanowires grown using metal-organic vapor phase epitaxy. Samples covering a radial InAs shell thickness of 1-12 ML were investigated. The effective masses for the wurtzite material were determined from the transition energy dependence of the InAs shell thickness, using a model based on linear deformation potential theory. InP cores with segments of mixed zincblende and wurtzite, on which quantum dots nucleated selectively, were also investigated. Narrow peaks were observed by mu PL and the spatial origin of the emission was identified with CL imaging.
引用
收藏
页数:5
相关论文
共 50 条
  • [21] Modeling Electronic and Optical Properties of InAs/InP Quantum Dots
    Huang, Fujuan
    Chen, Gaowen
    Zhang, Xiupu
    PHOTONICS, 2024, 11 (08)
  • [22] Quantum confinement of excitons in wurtzite InP nanowires
    Pemasiri, K.
    Jackson, H. E.
    Smith, L. M.
    Wong, B. M.
    Paiman, S.
    Gao, Q.
    Tan, H. H.
    Jagadish, C.
    JOURNAL OF APPLIED PHYSICS, 2015, 117 (19)
  • [23] Optical polarization properties of InAs/InP quantum dot and quantum rod nanowires
    Anufriev, Roman
    Barakat, Jean-Baptiste
    Patriarche, Gilles
    Letartre, Xavier
    Bru-Chevallier, Catherine
    Harmand, Jean-Christophe
    Gendry, Michel
    Chauvin, Nicolas
    NANOTECHNOLOGY, 2015, 26 (39)
  • [24] Optical investigation of InAs/InP(100) quantum dots grown by gas source molecular beam epitaxy
    Li, S. G.
    Gong, Q.
    Cao, C. F.
    Wang, X. Z.
    Yue, L.
    Liu, Q. B.
    Wang, H. L.
    Wang, Y.
    INFRARED PHYSICS & TECHNOLOGY, 2012, 55 (2-3) : 205 - 209
  • [25] Piezoelectric effect in InAs/InP quantum rod nanowires grown on silicon substrate
    Anufriev, Roman
    Chauvin, Nicolas
    Khmissi, Hammadi
    Naji, Khalid
    Patriarche, Gilles
    Gendry, Michel
    Bru-Chevallier, Catherine
    APPLIED PHYSICS LETTERS, 2014, 104 (18)
  • [26] Optical study on ultrathin InAs/InP single quantum wells.
    Bitz, A
    Jordan, C
    Di Ventra, M
    Mader, KA
    Andreani, LC
    Carlin, JF
    Rudra, A
    Staehli, JL
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1995, 17 (11-12): : 1367 - 1370
  • [27] Electrical and optical characterization of InAs quantum dots grown on ion implanted GaAs(100)
    Reuter, D
    Schafmeister, P
    Kailuweit, P
    Bock, C
    Kunze, U
    Wieck, AD
    2ND INTERNATIONAL CONFERENCE ON SEMICONDUCTOR QUANTUM DOTS, 2003, : 1109 - 1112
  • [28] Epitaxial growth and optical characterization of InAs/InGaAsP/InP self-assembled quantum dots
    Jeong, WG
    Dapkus, PD
    Lee, UH
    Yim, JS
    Lee, D
    Lee, BT
    APPLIED PHYSICS LETTERS, 2001, 78 (09) : 1171 - 1173
  • [29] Optical properties of columnar InAs quantum dots on InP for semiconductor optical amplifiers
    Kawaguchi, Kenichi
    Yasuoka, Nami
    Ekawa, Mitsuru
    Ebe, Hiroji
    Akiyama, Tomoyuki
    Sugawara, Mitsuru
    Arakawa, Yasuhiko
    APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [30] OPTICAL INVESTIGATION IN ULTRATHIN INAS/INP QUANTUM-WELLS GROWN BY HYDRIDE VAPOR-PHASE EPITAXY
    BANVILLET, H
    GIL, E
    CADORET, R
    DISSEIX, P
    FERDJANI, K
    VASSON, A
    VASSON, AM
    TABATA, A
    BENYATTOU, T
    GUILLOT, G
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1638 - 1641