Scaling and Graphical Transport-Map Analysis of Ambipolar Schottky-Barrier Thin-Film Transistors Based on a Parallel Array of Si Nanowires

被引:33
|
作者
Jeon, Dae-Young [1 ,2 ]
Pregl, Sebastian [1 ,2 ,3 ,4 ]
Park, So Jeong [1 ,2 ]
Baraban, Larysa [3 ,4 ]
Cuniberti, Gianaurelio [2 ,3 ,4 ]
Mikolajick, Thomas [1 ,2 ,5 ]
Weber, Walter M. [1 ,2 ]
机构
[1] Namlab gGmbH, D-01187 Dresden, Germany
[2] Tech Univ Dresden, Ctr Adv Elect Dresden CfAED, D-01062 Dresden, Germany
[3] Tech Univ Dresden, Inst Mat Sci, D-01062 Dresden, Germany
[4] Tech Univ Dresden, Max Bergmann Ctr Biomat, D-01062 Dresden, Germany
[5] Tech Univ Dresden, Chair Nanoelect Mat, D-01062 Dresden, Germany
关键词
Si nanowire; Schottky barrier; thin-film transistors; channel length scaling; current-voltage contour map; ELECTRICAL DETECTION; ELECTRONICS; DEVICES;
D O I
10.1021/acs.nanolett.5b01188
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted froth the channel length scaling based method. Especially, the newly suggested current voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi2 and Si-NW. Further, it reveals for the first-time in SB based FETs the important internal electrostatic coupling between the channel and externally applied voltages. This work provides helpful information for the realization of practical circuits with ambipolar SB-TFTs that can be transferred to different substrate technologies and applications.
引用
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页码:4578 / 4584
页数:7
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