Si nanowire (Si-NW) based thin-film transistors (TFTs) have been considered as a promising candidate for next-generation flexible and wearable electronics as well as sensor applications with high performance. Here, we have fabricated ambipolar Schottky-barrier (SB) TFTs consisting of a parallel array of Si-NWs and performed an in-depth study related to their electrical performance and operation mechanism through several electrical parameters extracted froth the channel length scaling based method. Especially, the newly suggested current voltage (I-V) contour map clearly elucidates the unique operation mechanism of the ambipolar SB-TFTs, governed by Schottky-junction between NiSi2 and Si-NW. Further, it reveals for the first-time in SB based FETs the important internal electrostatic coupling between the channel and externally applied voltages. This work provides helpful information for the realization of practical circuits with ambipolar SB-TFTs that can be transferred to different substrate technologies and applications.
机构:
Department of Electronics and Communication Engineering, Punjab Engineering College, Chandigarh, IndiaDepartment of Electronics and Communication Engineering, Punjab Engineering College, Chandigarh, India
Sharma, Deepak K.
Kumar, Vivek
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Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee, IndiaDepartment of Electronics and Communication Engineering, Punjab Engineering College, Chandigarh, India
Kumar, Vivek
Memories - Materials, Devices, Circuits and Systems,
2024,
7
机构:
Seoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect Engn & Comp Sci, Seoul 08826, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect Engn & Comp Sci, Seoul 08826, South Korea
Shin, Hyeonwoo
Park, Sang-Joon
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Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect Engn & Comp Sci, Seoul 08826, South Korea
Park, Sang-Joon
Kang, Byeong-Cheol
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Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect Engn & Comp Sci, Seoul 08826, South Korea
Kang, Byeong-Cheol
Ha, Tae-Jun
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Kwangwoon Univ, Dept Elect Mat Engn, Seoul 01897, South KoreaSeoul Natl Univ, Interuniv Semicond Res Ctr, Dept Elect Engn & Comp Sci, Seoul 08826, South Korea