Femtosecond laser-induced removal of silicon nitride layers from doped and textured silicon wafers used in photovoltaics

被引：34
|
作者：
Bonse, J. [1 ]
Mann, G. [1 ]
Krueger, J. [1 ]
Marcinkowski, M. [2 ]
Eberstein, M. [2 ]
机构：
[1] BAM Bundesanstalt Mat Forsch & Prufung, D-12205 Berlin, Germany
[2] Fraunhofer Inst Keram Technol & Syst IKTS, D-01277 Dresden, Germany
来源：
THIN SOLID FILMS | 2013年 / 542卷
关键词：
Photovoltaics; Solar cell; Laser processing; FS-laser ablation; Silicon nitride; SOLAR-CELLS; THIN-FILMS; ABLATION; MECHANISMS;
D O I：
10.1016/j.tsf.2013.07.005
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The removal of a 75- to 90-nm-thick passivating silicon nitride antireflection coating from standard textured multicrystalline silicon photovoltaic wafers with a typical diffused 90-Omega/sq-emitter upon irradiation with near-infrared femtosecond laser pulses (790 nm central wavelength, 30 fs pulse duration) is studied experimentally. The laser irradiation areas are subsequently characterized by complementary optical microscopy, scanning electron microscopy and depth profiling chemical analyses using secondary ion mass spectrometry. The results clarify the thin-film femtosecond laser ablation scenario and outline the process windows for selective antireflection coating removal. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：420 / 425
页数：6
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