Characteristics of SiOx-containing hard film prepared by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane or vinyltrimethylsilane and post oxygen plasma treatment

被引:10
|
作者
Wei, Yi-Syuan [1 ]
Liu, Wan-Yu [1 ]
Wu, Hsin-Ming [1 ]
Chen, Ko-Shao [1 ]
Cech, Vladimir [2 ]
机构
[1] Tatung Univ, Dept Mat Engn, Taipei 104, Taiwan
[2] Brno Univ Technol, Inst Mat Chem, CS-61090 Brno, Czech Republic
关键词
HMDSZ; VTMS; Plasma deposition; Refractive index; Transmittance; BARRIER COATINGS; SILICON DIOXIDE; THIN-FILM; IN-SITU; PECVD;
D O I
10.1016/j.matchemphys.2016.12.057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This study, monomers of hexamethyldisilazane (HMDSZ) and vinyltrimethylsilane (VTMS) were respectively used to deposit on the surface of polyethylene terephthalate (PET) substrate by plasma enhanced chemical vapor deposition. Oxygen plasma treatment follows the HMDSZ and VTMS deposition to produce a hydrophilic surface film on the deposited surface. Time for HMDSZ and VTMS plasma deposition was changed to investigate its influences on water contact angle, deposited film thickness, refractive index, and friction coefficient properties. The surface morphologies of the processed samples were observed by scanning electron microscope and their chemical compositions were measured by Xray photoelectron spectroscopy. At 550 nm wavelength, the optical transmittance of PET after the HMDSZ treatment decreases from 89% to 83%, but increases from 89% to 95% for the VTMS treatment. With increase in HMDSZ and VTMS deposition times, the film thickness increases and the refractive index decreases. Result revealed by XPS, SiO2 film is formed on the sample surface after the O-2 plasma treatment. The film adhesion capability by the HMDSZ+O-2 and VTMS+O-2 treatment was stronger than that by the HMDSZ and VTMS treatment only. The SiOx films produced by HMDSZ+O-2 and VTMS+O-2 treatment can increase the film hardness and improve light transmittance. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:183 / 190
页数:8
相关论文
共 50 条
  • [31] Nanocomposite low-k SiCOH films by plasma-enhanced chemical vapor deposition using vinyltrimethylsilane and CO2
    Jeong, KH
    Park, SG
    Rhee, SW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (06): : 2799 - 2803
  • [32] Characteristics of the nanoscale titanium film deposited by plasma enhanced chemical vapor deposition and comparison of the film properties with the film by physical vapor deposition
    Lee, JW
    Kim, SH
    Kwak, NJ
    Lee, YJ
    Sohn, HC
    Kim, JW
    Sun, HJ
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (03): : 1460 - 1463
  • [33] Characteristics of SiOx Thin Film Deposited by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Using PDMS/O2/He
    Lee, J. H.
    Kim, Y. S.
    Oh, J. S.
    Kyung, S. J.
    Lim, J. T.
    Yeom, G. Y.
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (07) : D248 - D252
  • [34] Hydrophobic TixOy-CmHn Nanoparticle Film Prepared by Plasma Enhanced Chemical Vapor Deposition
    王德信
    徐金洲
    刘伟
    郭颖
    杨沁玉
    丁可
    石建军
    张菁
    JournalofDonghuaUniversity(EnglishEdition), 2012, 29 (03) : 227 - 232
  • [35] Hydrophobic TixOy-CmHn nanoparticle film prepared by plasma enhanced chemical vapor deposition
    Wang, De-Xin
    Xu, Jin-Zhou
    Liu, Wei
    Guo, Ying
    Yang, Qin-Yu
    Ding, Ke
    Shi, Jian-Jun
    Zhang, Jing
    Journal of Donghua University (English Edition), 2012, 29 (03) : 227 - 232
  • [36] Characterization of TiOx film prepared by plasma enhanced chemical vapor deposition using a multi-jet hollow cathode plasma source
    Nakamura, M
    Korzec, D
    Aoki, T
    Engemann, J
    Hatanaka, Y
    APPLIED SURFACE SCIENCE, 2001, 175 : 697 - 702
  • [37] Influence of annealing temperature on ZnO film growth by plasma enhanced chemical vapor deposition
    Zhi, Zhuangzhi
    Wang, Bo
    Zhao, Changsheng
    Zhenkong Kexue yu Jishu Xuebao/Vacuum Science and Technology, 2004, 24 (03): : 187 - 190
  • [38] Polycrystalline silicon film formation at low temperature using ultra-high-frequency plasma enhanced chemical vapor deposition
    Mebarki, B
    Sumiya, S
    Yoshida, R
    Ito, M
    Hori, M
    Goto, T
    Samukawa, S
    Tsukada, T
    MATERIALS LETTERS, 1999, 41 (01) : 16 - 19
  • [39] Heat, moisture and chemical resistance on low dielectric constant (low-k) film using diethoxymethylsilane (DEMS) prepared by plasma enhanced chemical vapor deposition
    Cheng, YL
    Wang, YL
    Lan, JK
    Hwang, GJ
    O'Neil, ML
    Chen, CF
    SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10): : 3127 - 3133
  • [40] Growth of very low temperature polysilicon film by remote plasma-enhanced chemical-vapor deposition
    Oh, Jin-Ho
    Park, Chong-Yun
    Cho, Nam-Ihn
    Nam, Hyoung Gin
    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1997, 15 (04): : 1819 - 1823