共 50 条
- [1] Characteristics of a multilayer SiOx(CH)yNz film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N2O JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (10B): : 8430 - 8434
- [2] Characteristics of a multilayer SiOx(CH)yN z film deposited by low temperature plasma enhanced chemical vapor deposition using hexamethyldisilazane/Ar/N2O Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (10 B): : 8430 - 8434
- [4] Film characteristics of low-temperature plasma-enhanced chemical vapor deposition silicon dioxide using tetraisocyanatesilane and oxygen Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (12 A): : 6562 - 6568
- [5] Film characteristics of low-temperature plasma-enhanced chemical vapor deposition silicon dioxide using tetraisocyanatesilane and oxygen JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12A): : 6562 - 6568
- [6] Microstructure of SiOx:H films prepared by plasma enhanced chemical vapor deposition Chinese Physics, 2001, 9 (04): : 309 - 312
- [7] Microstructure of SiOx:H films prepared by plasma enhanced chemical vapor deposition CHINESE PHYSICS, 2000, 9 (04): : 309 - 312
- [9] Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane SURFACE & COATINGS TECHNOLOGY, 2006, 200 (10): : 3134 - 3139
- [10] Influence of Deposition Temperature on Microcrystalline Silicon Thin Film Prepared by Plasma Enhanced Chemical Vapor Deposition LIQUID CRYSTALS AND RELATED MATERIALS II, 2012, 181-182 : 401 - 404