Traps at the bonded interface in silicon-on-insulator structures

In this study, we compared the trap density distributions, D-it, in the band gap of silicon at the Si/thermal SiO2 interface and at the bonded interface of the silicon-on-insulator structure, deduced from deep level transient spectroscopy measurements. The trap energies for the bonded Si/SiO2 interface are localized in the range from E-c-0.17 to E-c-0.37 eV. The lack of the transient SiOx layer at the bonded interface is suggested to lead to a relatively narrow interval of trap energies. (C) 2001 American Institute of Physics.