I-V characteristics of volcano type Si FEAs with diamondlike carbon coating

被引：0
|
作者：
Kim, H
Choi, YW
Choi, JO
Jeong, HS
Ahn, S
机构：
来源：
IVMC '96 - 9TH INTERNATIONAL VACUUM MICROELECTRONICS CONFERENCE, TECHNICAL DIGEST | 1996年
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the field emission characteristics of DLC (Diamondlike Carbon) coated Si tip FEAs (Field Emitter Arrays) Volcano Shaped gate was fabricated in order to obtain self-aligned structure. Si tip was sharpened by conventional isotropic dry etching. The DLC thin film was uniformly deposited on Si tip emitters by PECVD. Gate aperture was defined by Ar etch-back process of photoresist planarization layer. We obtained the emission current of 10 nA/tip and it was found that DLC coating improved the I-V characteristics of Si tip FEAs. In addition, changes of emission characteristics were investigated with respect to the thickness and physical properties of DLC deposited on Si tip emitters.
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页码：344 / 348
页数：5
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