High temperature implantation of beta-SiC and its characterization

被引：0

作者：

Lossy, R ^{[1
]}

Reichert, W ^{[1
]}

Obermeier, E ^{[1
]}

Stoemenos, J ^{[1
]}

机构：

[1] ARISTOTELIAN UNIV THESSALONIKI,DEPT PHYS,GR-54006 THESSALONIKI,GREECE

来源：

SILICON CARBIDE AND RELATED MATERIALS 1995 | 1996年 / 142卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ion implantation at different substrate temperatures ranging from room temperature to 1073 K has been performed. With this work the influence of the implantation temperature on morphological and electrical properties of the implanted samples is presented. The resulting implantation profiles are analysed using SIMS. They are compared with theoretical predictions based on Monte Carlo simulations showing a reasonable agreement. Electrical activation during high temperature implantation was ascertained by Hall measurements. At room temperature an activation of 15% is achieved for implantation at 1073K. Morphology and damage from implantation are investigated by cross section electron microscopy and Rutherford backscattering.

引用

页码：553 / 556

页数：4

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