Process quality control for large-scale silicon sensor productions

Today's high energy particle physics experiments use silicon sensors in large quantities. During series production, a stable manufacturing process must be guaranteed. Critical process parameters are monitored on test structures. Measurement techniques and test structure layout have to be optimized for automated testing. In this contribution, a set of test structures for automated probe card measurements on high-resistivity p-type silicon sensors is presented. This paper shows results of research on the application of metal-oxide-semiconductor capacitors for measurements of the bulk doping concentration, a four-point probe structure for resistivity measurements, and field effect transistors for the study of strip isolation parameters. During series production, the investigated structures could be used as fast, low-voltage alternatives to standard diode measurements and strip scans on the main sensors.