The Study of the Geometry and Growth Trend of Silicon Carbide Crystals

The study compared the influences of silicon materials from different sources on the crystal growth process and geometry of silicon carbide (SiC). As revealed by the results of the study, although the purity of commercial silicon material was as high as 11N, the rate of crystal growth was slow. However, if silicon material made from electron-beam refined metallurgical silicon was utilized for the SiC crystal growth experiment, the morphology of the SiC crystal was better and the rate of crystal growth was faster despite its purity being only about 4.5N.