Preparation and properties of (Ba0.6Sr0.4)Bi2Ta2O9 ceramic

被引:23
|
作者
Zhang, XY
Huang, ZZ
Chan, HLW [1 ]
Kwok, KW
Choy, CL
机构
[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Peoples R China
[2] Hong Kong Polytech Univ, Mat Res Ctr, Hong Kong, Peoples R China
关键词
bismuth compounds; sintering; piezoelectric properties;
D O I
10.1016/S0955-2219(98)00358-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
(Ba0.6Sr0.4)Bi2Ta2O9 (BSBT) ceramic materials with plate-like grains were prepared by the conventional mixed oxide method. The microstructures of BSBT ceramic sintered at different temperatures were studied The variations of the saturation polarization (P-s), remanent polarization (P-r) and coercive field (E-c) with applied electric field and temperature were studied by hysteresis (D-E loop) measurements. The permittivities, piezoelectric and pyroelectric coefficients of BSBT ceramic poled at various electric fields and temperatures were measured. (C) 1999 Elsevier Science Limited. All rights reserved.
引用
收藏
页码:985 / 988
页数:4
相关论文
共 50 条
  • [41] The effect of Cr doping on the microstructural and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films
    Kim, KT
    Kim, CI
    THIN SOLID FILMS, 2005, 472 (1-2) : 26 - 30
  • [42] The effect of annealing temperature on the structure and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films
    Wu, WB
    Peng, DW
    Liang, XF
    Meng, ZY
    ISAF 2002: PROCEEDINGS OF THE 13TH IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, 2002, : 211 - 214
  • [43] RAMAN MEASUREMENTS OF THE FERROELECTRIC BA0.4SR0.6NB2O6
    BURNS, G
    DACOL, FH
    NEURGAONKAR, RR
    BHALLA, AS
    GUO, R
    FERROELECTRICS, 1990, 108 : 189 - 193
  • [44] X-ray diffraction and micro-Raman investigation of (Sr1-xCax)Bi2Ta2O9 ceramics
    Das, RR
    Pérez, W
    Katiyar, RS
    INTEGRATED FERROELECTRICS, 2001, 37 (1-4) : 625 - 633
  • [45] Crystal structure and ferroelectric properties of ABi2Ta2O9 (A = Ca, Sr, and Ba)
    Shimakawa, Y
    Kubo, Y
    Nakagawa, Y
    Goto, S
    Kamiyama, T
    Asano, H
    Izumi, F
    PHYSICAL REVIEW B, 2000, 61 (10) : 6559 - 6564
  • [46] Electronic structures and ferroelectric properties of ABi2Ta2O9 (A= Ca, Sr, and Ba)
    Cai, MQ
    Yin, Z
    Zhang, MS
    SOLID STATE COMMUNICATIONS, 2005, 133 (10) : 663 - 666
  • [47] Electronic structure and photocatalytic properties of ABi2Ta2O9 (A = Ca, Sr, Ba)
    Li, Yingxuan
    Chen, Gang
    Zhang, Hongjie
    Li, Zhonghua
    Sun, Jingxue
    JOURNAL OF SOLID STATE CHEMISTRY, 2008, 181 (10) : 2653 - 2659
  • [48] Photoluminescence of Ce:Sr0.6Ba0.4Nb2O6 crystals
    Choi, SW
    Kim, MY
    Lee, SH
    Lee, CW
    Lee, SC
    Lim, KS
    Lee, M
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1998, 33 (03) : 333 - 336
  • [49] Dielectric property of Ba0.6Sr0.4TiO3–Mg0.9Zn0.1O ceramic with additives of Sm2O3 and Ta2O5
    Shuwang Ma
    Guixia Dong
    Zhimin Yang
    Jun Du
    Journal of Materials Science: Materials in Electronics, 2009, 20 : 1106 - 1111
  • [50] Microstructure and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films grown on super smooth glazed-Al2O3 ceramics substrate
    Chen, Hongwei
    Yang, Chuanren
    Zheng, Shanxue
    Zhang, Jihua
    Zhang, Qiaozhen
    Lei, Guanhuan
    Lou, Feizhi
    Yang, Lijun
    APPLIED SURFACE SCIENCE, 2011, 258 (04) : 1510 - 1513