Influence of properties of Si3N4 passivation layer on the electrical characteristics of Normally-off AlGaN/GaN HEMT

被引：0

作者：

Iucolano, F. ^{[1
]}

Miccoli, C. ^{[1
]}

Nicotra, M. ^{[1
]}

Stocco, A. ^{[2
]}

Rampazzo, F. ^{[2
]}

Zanandrea, A. ^{[2
]}

Martino, Cinnera, V ^{[1
]}

Patti, A. ^{[1
]}

Rinaudo, S. ^{[1
]}

Soci, F. ^{[3
]}

Chini, A. ^{[3
]}

Zanoni, E. ^{[2
]}

Meneghesso, G. ^{[2
]}

机构：

[1] STMicroelectronics, IMS R&D, Catania, Italy

[2] Univ Padua, Dept Informat Engn, Padua, Italy

[3] Univ Modena, Dept Engn Enzo Ferrari, Reggio Emilia, Italy

来源：

2013 1ST IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a comparison between two samples with two different SiN passivation layers was performed. An increment of the drain leakage current increasing the Si concentration in the SiN layer was observed. On the other hand, a similar behavior of dynamic R-ON was recorded. T-CAD simulations supported our hypothesis on the factors that cause parametric yield loss.

引用

页码：162 / 165

页数：4

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