Photocapacitance relaxation in amorphous As2Se3 films

被引：3

作者：

Vasiliev, IA ^{[1
]}

Shutov, SD ^{[1
]}

机构：

[1] Moldavian Acad Sci, Inst Appl Phys, Kishinev 2028, Moldova

来源：

SEMICONDUCTORS | 1999年 / 33卷 / 07期

关键词：

D O I：

10.1134/1.1187783

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Studies of the photocapacitance of a-As2Se3 films reveal that its relaxation has a fast and a slow component, leading to two distinct spectra for the density and absorption cross section of deep levels, with different thresholds and magnitudes. The authors associate the fast component of the relaxation with photoemission of holes from D+ centers, and speculate on the possible nature of the slow component as well. (C) 1999 American Institute of Physics. [S1063-7826(99)02007-4].

引用

页码：792 / 794

页数：3

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