Noise in Avalanche Photodiodes

被引：0

作者：

Emami, Farzin ^{[1
]}

Tehrani, M. Ferdosian ^{[2
]}

机构：

[1] Shiraz Univ Technol, Optoelect Res Ctr, Elect & Elect Dept, Shiraz, Iran

[2] Azad Univ, Elect & Elect Dept, Fars Sci & Res, Fars, Iran

来源：

PROCEEDINGS OF THE 12TH WSEAS INTERNATIONAL CONFERENCE ON COMMUNICATIONS: NEW ASPECTS OF COMMUNICATIONS | 2008年

关键词：

photodiode; noise; impact ionization; DSMT; MDSMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Avalanche photodiodes (APDs) are the most popular devices in optoelectronic detecting systems. Some PIN photodiodes exhibit low noise and high bandwidth but APDs provides more sensitive characteristics relative to PIN detectors. A historical overview of the noise specifications is presented in this article. Some structures such as thin multiplication layer APDs, impact ionization engineering, ultra-low noise APD with a centered-well multiplication region and some theories such as dead space multiplication theory (DSMT) and modified DSMT (MDSMT) are reviewed.

引用

页码：327 / +

页数：3

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