Point defects in binary laves phase alloys

被引:97
|
作者
Zhu, JH
Pike, LM
Liu, CT
Liaw, PK
机构
[1] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
[2] Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
关键词
intermetallic compounds; lattice defects; vacancy; fracture and fractive roughness; hardness;
D O I
10.1016/S1359-6454(99)00090-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Point defects in the binary C15 NbCr2 and NbCo2, and C14 NbFe2 systems on both sides of stoichiometry were studied by bulb; density and X-ray lattice parameter measurements. It was found that the vacancy concentrations in these systems after quenching from 1000 degrees C are essentially zero. The constitutional defects on both sides of stoichiometry for these systems were found to be of the anti-site type in comparison with model predictions. Thermal vacancies exhibiting a maximum at the stoichiometric composition were observed in NbCr2 Laves phase alloys after quenching from 1400 degrees C. However, there are essentially no thermal vacancies in NbFe2 alloys after quenching from 1300 degrees C. Anti-site hardening was found on both sides of stoichiometry for all the three Laves phase systems studied. Neither the anti-site defects nor the thermal vacancies affect the fracture toughness of the Laves phases significantly. (C) 1999 Acta Metallurgica Inc. Published by Elsevier Science Ltd.! All rights reserved.
引用
收藏
页码:2003 / 2018
页数:16
相关论文
共 50 条
  • [31] Precipitation of icosahedral quasicrystalline phase, R-phase and Laves phase in ferritic alloys
    Yamamoto, K
    Kimura, Y
    Mishima, Y
    14TH CONGRESS OF INTERNATIONAL FEDERATION FOR HEAT TREATMENT AND SURFACE ENGINEERING, VOLS 1 AND 2, PROCEEDINGS, 2004, : 229 - 233
  • [32] EFFECTIVE ATOMIC RADIUS OF SILICON IN TERNARY LAVES PHASE ALLOYS
    BARDOS, AM
    BECK, PA
    BARDOS, DI
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1963, 227 (04): : 991 - &
  • [33] Hydrogenation properties of Mg-based Laves phase alloys
    Tsushio, Y
    Akiba, E
    JOURNAL OF ALLOYS AND COMPOUNDS, 1998, 269 (1-2) : 219 - 223
  • [34] EHMO cluster calculations on hyperstoichiometric Laves phase alloys and hydrides
    Babu, RSA
    Viswanathan, B
    Murthy, SS
    INDIAN JOURNAL OF ENGINEERING AND MATERIALS SCIENCES, 1996, 3 (04) : 163 - 166
  • [35] PRESSURE DEPENDENCE OF CURIE TEMPERATURE OF FERROMAGNETIC LAVES PHASE ALLOYS
    ALFIERI, GT
    BANKS, E
    KANEMATS.K
    JOURNAL OF APPLIED PHYSICS, 1969, 40 (03) : 1322 - &
  • [36] The effect of the particle pulverization on electrochemical properties of Laves phase alloys
    Gao, XP
    Sun, YM
    Toyoda, E
    Higuchi, E
    Nakagima, T
    Suda, S
    ELECTROCHIMICA ACTA, 2000, 45 (19) : 3099 - 3104
  • [37] EFFECTIVE ATOMIC RADIUS OF SILICON IN TERNARY LAVES PHASE ALLOYS
    HUMEROTHERY, W
    TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1965, 233 (04): : 848 - +
  • [38] Native point defects in binary InP semiconductors
    Mishra, Rohan
    Restrepo, Oscar D.
    Kumar, Ashutosh
    Windl, Wolfgang
    JOURNAL OF MATERIALS SCIENCE, 2012, 47 (21) : 7482 - 7497
  • [39] Native point defects in binary InP semiconductors
    Rohan Mishra
    Oscar D. Restrepo
    Ashutosh Kumar
    Wolfgang Windl
    Journal of Materials Science, 2012, 47 : 7482 - 7497
  • [40] Second Phase Precipitation within a Laves Phase in the Ir-Y Binary System
    Sekido, N.
    Yamabe-Mitarai, Y.
    THERMEC 2009, PTS 1-4, 2010, 638-642 : 1400 - 1405