Intrinsic Tolerance to Total Ionizing Dose Radiation in Gate-All-Around MOSFETs

被引：22

作者：

Comfort, Everett S. ^{[1
]}

Rodgers, Martin P. ^{[1
]}

Allen, William ^{[1
]}

Gausepohl, Steve C. ^{[1
]}

Zhang, Enxia X. ^{[2
]}

Alles, Michael L. ^{[2
]}

Hughes, Harold L. ^{[3
]}

McMarr, Patrick J. ^{[3
]}

Lee, Ji Ung ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] Vanderbilt Univ, Elect Engn & Comp Sci Dept, Nashville, TN 37235 USA

[3] US Naval Res Lab, Washington, DC 20375 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2013年 / 60卷 / 06期

关键词：

Gate-all-around; radiation effects; total ionizing dose; x-ray radiation; CHARGE;

D O I：

10.1109/TNS.2013.2280247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We measured the total ionizing dose response of gate-all-around silicon nanowire n- and pMOSFETs to x-ray doses up to 2Mrad(SiO2). We show that they are radiation hard, with no degradation in threshold voltage, off-state current, or subthreshold slope, even at the highest dose for a wide range of bias conditions. We attribute this to the intrinsically rad-hard feature of the gate-all-around device design, where the channel is no longer in contact with any insulating layers that could form a parasitic channel.

引用

页码：4483 / 4487

页数：5

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