Low resistivity of N-doped Cu2O thin films deposited by if-magnetron sputtering

被引：24
|
作者：
Lai, Guozhong [1 ]
Wu, Yangwei [2 ]
Lin, Limei [2 ]
Qu, Yan [2 ]
Lai, Fachun [2 ]
机构：
[1] Longyan Univ, Sch Phys & Electromech Engn, Longyan 364012, Peoples R China
[2] Fujian Normal Univ, Sch Phys & Energy, Fuzhou 350007, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2013年 / 285卷
关键词：
Cu2O; N-doped; Sputtering; SOLAR-CELLS; COPPER; OXIDATION;
D O I：
10.1016/j.apsusc.2013.08.122
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
N-doped Cu2O films were deposited on quartz substrates by reactive magnetron sputtering with a Cu2O target. The structure, deposited rate, and electrical properties of the films were influenced by the partial pressure of nitrogen. It is found that the structure and electrical properties of the films in different nitrogen partial pressure could be divided into three stages: the low, middle, and highly N-doping ranges. The film deposited at nitrogen partial pressure of 0.035 Pa has the lowest resistivity (0.112 SZ cm). (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：755 / 758
页数：4
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