Photonic-band-gap properties of two-dimensional lattices of Si nanopillars

被引:38
|
作者
Poborchii, VV
Tada, T
Kanayama, T
机构
[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3050046, Japan
[2] Natl Inst Adv Ind Sci & Technol, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan
[3] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan
关键词
D O I
10.1063/1.1446659
中图分类号
O59 [应用物理学];
学科分类号
摘要
We studied photonic-band-gap properties of two-dimensional lattices of Si nanopillars by theoretical calculation and measurement of reflection and transmission spectra. We focused on advantages of these photonic crystals compared to other Si photonic crystals, which usually operate in the range of transparency of bulk Si (wavelengths longer than similar to1.1 mum). We showed that the available spectral range for the photonic crystals of Si nanopillars can be extended to the submicron wavelengths, light absorption by Si nanopillars being insignificant. Another important advantage of Si nanopillar lattices is the ability to incorporate luminescent materials into the huge free space of this photonic crystal. We demonstrate the inhibition of spontaneous emission of dye incorporated into the nanopillar lattice. (C) 2002 American Institute of Physics.
引用
收藏
页码:3299 / 3305
页数:7
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