Liquid phase epitaxy growth and photoluminescence of InAs1-x-ySbxPyepilayer

被引：3
|
作者：
Xie, Hao [1 ,2 ]
Lin, Hongyu [1 ,2 ]
Wang, Yang [1 ,2 ]
Lu, Hongbo [2 ]
Sun, Yan [2 ]
Hao, Jiaming [2 ]
Hu, Shuhong [2 ]
Dai, Ning [2 ]
机构：
[1] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 08期
基金：
中国国家自然科学基金;
关键词：
semiconducting quaternary compounds; liquid phase epitaxy; high resolution x-ray diffraction; Room temperature photoluminescence; MU-M; INAS1-X-YSBXPY;
D O I：
10.1088/2053-1591/ab2434
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1-x-ySbxPy epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1-x-ySbxPy epilayer. InAs1-x-ySbxPy alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.
引用
收藏
页数：5
相关论文
共 50 条
  • [21] Mid-infrared photoluminescence from liquid phase epitaxial InAs1-ySby/InAs multilayers
    Gong, XY
    Yamaguchi, T
    Kan, H
    Makino, T
    Rowell, NL
    Lacroix, Y
    Mangyou, A
    Aoyama, R
    Kumagawa, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02): : 738 - 742
  • [22] LIQUID-PHASE EPITAXIAL-GROWTH OF INASXSBYP1-X-Y LAYERS ON INAS
    GERTNER, ER
    CHEUNG, DT
    ANDREWS, AM
    LONGO, JT
    JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 163 - 172
  • [23] Low-temperature electrical characterizations of InAs1-x-ySbyPx photodiodes fabricated by liquid-phase epitaxy
    Uen, WY
    Liao, SM
    Lin, CT
    Wu, CH
    SOLID-STATE ELECTRONICS, 2002, 46 (09) : 1405 - 1409
  • [24] LIQUID-PHASE EPITAXIAL-GROWTH OF INASXSBYP1-X-Y LAYERS ON INAS
    GERTNER, ER
    CHEUNG, DT
    ANDREWS, AM
    LONGO, JT
    JOURNAL OF ELECTRONIC MATERIALS, 1976, 5 (04) : 445 - 445
  • [25] PHOTOLUMINESCENCE STUDY OF ALXGA1-XSB GROWN BY LIQUID-PHASE EPITAXY
    KITAMURA, N
    HIGUCHI, K
    UEKITA, H
    ICHIMURA, M
    USAMI, A
    WADA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (08): : 1403 - 1407
  • [26] Growth of (InSb)1 − x(Sn2)x films on GaAs substrates by liquid-phase epitaxy
    A. S. Saidov
    M. S. Saidov
    Sh. N. Usmonov
    U. P. Asatova
    Semiconductors, 2010, 44 : 938 - 945
  • [27] ZNTE-INAS HETEROJUNCTIONS PREPARED BY LIQUID-PHASE EPITAXY
    TAMURA, T
    TAKAHASHI, K
    MORIIZUMI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (07) : 1024 - +
  • [28] PREPARATION OF ZNTE-INAS HETEROJUNCTIONS BY LIQUID-PHASE EPITAXY
    TAMURA, T
    MORIIZUMI, T
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) : 813 - +
  • [29] Optical properties of GaInAsSb/InAs epilayers grown by liquid phase epitaxy
    Gong, X.Y.
    Yamaguchi, T.
    Kan, Hirofumi
    Makino, T.
    Nakatsukasa, T.
    Kaneko, Y.
    Aoyama, M.
    Rowell, Nelson L.
    Wang, A.G.
    Rinfret, R.
    Proceedings of SPIE - The International Society for Optical Engineering, 1994, 2364 : 41 - 46
  • [30] LIQUID-PHASE EPITAXIAL-GROWTH OF TERNARY INASXSB1-X FOR SMALL AMOUNTS OF INAS
    SU, YK
    JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (12) : 1513 - 1514
12345