Liquid phase epitaxy growth and photoluminescence of InAs1-x-ySbxPyepilayer

被引：3
|
作者：
Xie, Hao [1 ,2 ]
Lin, Hongyu [1 ,2 ]
Wang, Yang [1 ,2 ]
Lu, Hongbo [2 ]
Sun, Yan [2 ]
Hao, Jiaming [2 ]
Hu, Shuhong [2 ]
Dai, Ning [2 ]
机构：
[1] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
MATERIALS RESEARCH EXPRESS | 2019年 / 6卷 / 08期
基金：
中国国家自然科学基金;
关键词：
semiconducting quaternary compounds; liquid phase epitaxy; high resolution x-ray diffraction; Room temperature photoluminescence; MU-M; INAS1-X-YSBXPY;
D O I：
10.1088/2053-1591/ab2434
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1-x-ySbxPy epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1-x-ySbxPy epilayer. InAs1-x-ySbxPy alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.
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页数：5
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