A high voltage generator using charge pump circuit for low voltage flash memories

被引：0
|
作者：
Min, KW [1 ]
Kim, SH [1 ]
机构：
[1] Wonkwang Univ, Dept Semicond Sci, Jeonbuk 570749, South Korea
来源：
IEICE TRANSACTIONS ON ELECTRONICS | 1999年 / E82C卷 / 05期
关键词：
high voltage generator; charge pump circuit; flash memory;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An on-chip high voltage generator applicable to low voltage flash memory is introduced. Bootstrapped gate transfer switches of two parallel paths suppress the voltage loss due to threshold voltage drop of transfer transistors. The simulated results demonstrate that proposed circuit designed with NMOS transistors having 0.8 volt threshold voltage works like an ideal charge pump circuit near 1.0 volt range with enough current driving capability.
引用
收藏
页码：781 / 784
页数：4
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