Characterization and modeling of spiking and bursting in experimental NbO x neuron

被引:2
|
作者
Drouhin, Marie [1 ,2 ]
Li, Shuai [1 ]
Grelier, Matthieu [1 ]
Collin, Sophie [1 ]
Godel, Florian [1 ]
Elliman, Robert G. [3 ]
Dlubak, Bruno [1 ]
Trastoy, Juan [1 ]
Querlioz, Damien [2 ]
Grollier, Julie [1 ]
机构
[1] Univ Paris Saclay, Unite Mixte Phys CNRS, Thales, F-91767 Palaiseau, France
[2] Univ Paris Saclay, Ctr Nanosci & Nanotechnol, CNRS, F-91120 Palaiseau, France
[3] Australian Natl Univ, Res Sch Phys, Dept Elect Mat Engn, Canberra, ACT 2601, Australia
来源
基金
欧洲研究理事会;
关键词
spiking neuron; nanoneuron; memristor; niobium oxide; Poole-Frenkel transport; ARTIFICIAL NEURON; CONDUCTIVITY; THRESHOLD; DEVICES; MEMORY;
D O I
10.1088/2634-4386/ac969a
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hardware spiking neural networks hold the promise of realizing artificial intelligence with high energy efficiency. In this context, solid-state and scalable memristors can be used to mimic biological neuron characteristics. However, these devices show limited neuronal behaviors and have to be integrated in more complex circuits to implement the rich dynamics of biological neurons. Here we studied a NbOx memristor neuron that is capable of emulating numerous neuronal dynamics, including tonic spiking, stochastic spiking, leaky-integrate-and-fire features, spike latency, temporal integration. The device also exhibits phasic bursting, a property that has scarcely been observed and studied in solid-state nano-neurons. We show that we can reproduce and understand this particular response through simulations using non-linear dynamics. These results show that a single NbOx device is sufficient to emulate a collection of rich neuronal dynamics that paves a path forward for realizing scalable and energy-efficient neuromorphic computing paradigms.
引用
收藏
页数:9
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