Deposition and etching of amorphous carbon films prepared by ECR-plasma-enhanced benzene chemical vapor deposition

被引：0
|
作者：
Chen, XH [1 ]
Tolbert, LM [1 ]
Ning, ZY [1 ]
Hess, DW [1 ]
机构：
[1] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA
来源：
PROPERTIES AND PROCESSING OF VAPOR-DEPOSITED COATINGS | 1999年 / 555卷
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous hydrogenated carbon thin films have been deposited from benzene vapor in a microwave electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. Plasma enhanced dissociation and reaction of benzene were monitored by mass spectrometry. Deposited films were characterized by Fourier transform infrared spectroscopy and fluorescence spectroscopy. The effect of the deposition rate on the film density and plasma etch resistance was also studied. The etch resistance of deposited carbon film is higher than the conventional resist Novolac.
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页码：315 / 320
页数：6
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