Asymmetric tunnel barrier in a Si single-electron transistor

被引：3
|
作者：
Fujiwara, A [1 ]
Takahashi, Y [1 ]
Murase, K [1 ]
机构：
[1] NTT, Basic Res Labs, Kanagawa 2430198, Japan
来源：
MICROELECTRONIC ENGINEERING | 1999年 / 47卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(99)00195-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Strong asymmetry was found in conductance versus source-drain voltage in Si single-electron transistors. This suggests that the potential profile of the tunnel barrier is asymmetric along the direction of current flow.
引用
收藏
页码：197 / 199
页数：3
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