A physics-based low frequency noise model for MOSFETs under periodic large signal excitation

In recent years several publications have reported reductions in the low frequency noise of MOSFETs under large signal excitation ([1]-[5]). These observations can become very relevant for analog and RF circuit design ([3], [6]). The classically used low frequency noise models for circuit simulation are not able to explain the effect. In this paper, we extend the models to non-equilibrium biasing conditions and give a device-physics based explanation for the noise amplitude reduction. In addition we will present measurements in good agreement with the derived model, and suggest how to implement it into standard compact models.