Two-photon absorption in single site-controlled InGaN/GaN quantum dots

被引:5
|
作者
Jarjour, AF [1 ]
Parker, TJ [1 ]
Taylor, RA [1 ]
Martin, RW [1 ]
Watson, IM [1 ]
机构
[1] Univ Oxford, Dept Phys, Oxford OX1 3PU, England
关键词
D O I
10.1002/pssc.200562028
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We present micro-photoluminescence measurements on single site-controlled InGaN/GaN quantum dots using two-photon excitation Furthermore, measurements of photoluminescence excitation and time-resolved photoluminescence are also presented. We show that two-photon excitation results in total suppression of the emission from the underlying quantum well, to which the quantum dots are couple, and yet strong quantum dot emission. We attribute this effect to the enhancement of the two-photon absorption in the quantum dots as a result of the zero-dimensional confinement compared to that of the quantum wells. (c) 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:3843 / 3846
页数:4
相关论文
共 50 条
  • [31] Two-photon photoluminescence and excitation spectra of InGaN/GaN quantum wells
    Li, Q.
    Xu, S. J.
    Li, G. Q.
    Dai, D. C.
    Che, C. M.
    APPLIED PHYSICS LETTERS, 2006, 89 (01)
  • [32] Site-controlled GaN nanocolumns with InGaN insertions grown by MBE
    Nechaev, D. V.
    Semenov, A. N.
    Koshelev, O. A.
    Jmerik, V. N.
    Davydov, V. Yu
    Smirnov, A. N.
    Pozina, G.
    Shubina, T. V.
    Ivanov, S. V.
    4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017), 2017, 917
  • [33] Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects
    Bardoux, R.
    Funato, M.
    Kaneta, A.
    Kawakami, Y.
    Kikuchi, A.
    Kishino, K.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2013, 7 (05): : 344 - 347
  • [34] Electrical switching of photoluminescence of single site-controlled InAs quantum dots
    Schramm, A.
    Koski, E.
    Kontio, J. M.
    Tommila, J.
    Hakkarainen, T. V.
    Lupo, D.
    Guina, M.
    ELECTRONICS LETTERS, 2016, 52 (14) : 1240 - 1241
  • [35] Micropillars with a controlled number of site-controlled quantum dots
    Kaganskiy, Arsenty
    Gericke, Fabian
    Heuser, Tobias
    Heindel, Tobias
    Porte, Xavier
    Reitzenstein, Stephan
    APPLIED PHYSICS LETTERS, 2018, 112 (07)
  • [36] Single electron transport through site-controlled InAs quantum dots
    Cha, K. M.
    Shibata, K.
    Hirakawa, K.
    APPLIED PHYSICS LETTERS, 2012, 101 (22)
  • [37] Site-controlled InAs Quantum Dots for Plasmonics
    Hakkarainen, T. V.
    Tommila, J.
    Schramm, A.
    Simonen, J.
    Niemi, T.
    Kontio, J.
    Guina, M.
    2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO), 2016,
  • [38] Single Photon Emission from Site-Controlled InAs Quantum Dots Grown on GaAs(001) Patterned Substrates
    Martin-Sanchez, J.
    Munoz-Matutano, G.
    Herranz, J.
    Canet-Ferrer, J.
    Alen, B.
    Gonzalez, Y.
    Alonso-Gonzalez, P.
    Fuster, D.
    Gonzalez, L.
    Martinez-Pastor, J.
    Briones, F.
    ACS NANO, 2009, 3 (06) : 1513 - 1517
  • [39] Size dependence of two-photon absorption in semiconductor quantum dots
    Dakovski, Georgi L.
    Shan, Jie
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (01)
  • [40] Two-photon absorption in direct bandgap semiconductors quantum dots
    Padilha, Lazaro A.
    Fu, Jie
    Nootz, G.
    Hagan, David J.
    Van Stryland, Eric W.
    Buso, D.
    Martucci, A.
    Cesar, Carlos L.
    Barbosa, Luiz C.
    Cruz, Carlos H. B.
    NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES III, 2006, 6327