Investigation of the emission of photons induced in the volume reflection of 10-GeV positrons in a bent silicon single crystal

被引：16
|
作者：
Afonin, A. G. [1 ]
Baranov, V. T. [1 ]
Britvich, G. I. [1 ]
Bugorskii, A. P. [1 ]
Kotov, V. I. [1 ]
Kushnirenko, A. E. [1 ]
Maisheev, V. A. [1 ]
Pikalov, V. A. [1 ]
Chepegin, V. N. [1 ]
Chesnokov, Yu. A. [1 ]
Yazynin, I. A. [1 ]
Ivanov, Yu. M. [2 ]
Skorobogatov, V. V. [2 ]
机构：
[1] Inst High Energy Phys, Protvino 142281, Moscow Region, Russia
[2] Russian Acad Sci, Petersburg Nucl Phys Inst, Gatchina 183300, Russia
来源：
JETP LETTERS | 2008年 / 88卷 / 07期
关键词：
D O I：
10.1134/S0021364008190028
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The emission of photons in the motion of a 10-GeV positron beam in bent silicon crystals has been experimentally investigated. The experimental data are compared with the theoretical calculations.
引用
收藏
页码：414 / 417
页数：4
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