We have investigated effects of the reaction conditions such as mixing of solution, reactant concentration, feeding time and molecular weight of alcohol solvents on the size and morphology of silicon oxide in a sol-gel process in Rushton type reactor. To describe the intensity oi mixing of solution the Fewer input, which means the energy dissipated in the solution, was used. The particle nucleation and growth processes of silicon oxide were varied with all the reaction conditions. However, the particle morphology oi silicon oxide depended mostly on the reactant concentration and molecular weight of alcohol solvents under various reaction conditions. If the supersaturation level of silicon oxide in the solution was promoted by variation of reaction conditions, the particle nucleation and growth processes were facilitated and it resulted in reduction of relative induction time and in increase of mean particle size of silicon oxide. To explain the principal mechanism of particle growth process of silicon oxide the two-step growth model was applied.
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Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Kroon, R. E.
Ahmed, H. A. A. Seed
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Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Ahmed, H. A. A. Seed
Ntwaeaborwa, O. M.
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Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Ntwaeaborwa, O. M.
Koao, L. F.
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Univ Free State, Dept Phys, ZA-9866 Phuthaditjhaba, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Koao, L. F.
Nagpure, I. M.
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Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Nagpure, I. M.
Gusowski, M. A.
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Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Gusowski, M. A.
Botha, J. R.
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Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
Botha, J. R.
Swart, H. C.
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Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South AfricaUniv Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
机构:
Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Chen, M
Wang, HS
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, HS
Qian, GD
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Qian, GD
Wang, ZY
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China
Wang, ZY
Wang, MQ
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Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R ChinaZhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China