Low-temperature preparation and characterization of the PZT ferroelectric thin films sputtered on FTO glass substrate

被引：25
|
作者：
Wang, Z. D. [1 ]
Lai, Z. Q. [1 ]
Hu, Z. G. [1 ]
机构：
[1] Nanchang Univ, Dept Phys, Nanchang 330031, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2014年 / 583卷
关键词：
Ferroelectric thin film; Optical properties; RF-magnetron sputtering; FTO; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; CRYSTALLIZATION; FABRICATION; LAYER;
D O I：
10.1016/j.jallcom.2013.08.197
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Pb(Zr0.52Ti0.48)O-3 ferroelectric thin films were in situ deposited on FTO glass substrate by RF magnetron sputtering process at low substrate temperature of 260 degrees C, through optimizing the process parameters of sputtering power, sputtering gas pressure, and substrate temperature. Ferroelectric properties, surface morphology, and optical transmittance of PZT thin films are investigated by standardized ferroelectric test system, atomic force microscope, and UV-Vis spectrometer, respectively. The results show that the sample deposited at 260 degrees C exhibits ferroelectric properties with P-r and P-s of 3.86 mu m/cm(2) and 8.85 mu m/cm(2), respectively. The arithmetic average roughness PZT thin film is 95.9 nm. Interestingly, the mean transmittance of the sample is above 80% in the visible light range. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码：452 / 454
页数：3
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