Phase Change Memory: Scaling and Applications

被引：0
|
作者：
Jeyasingh, Rakesh [1 ]
Liang, Jiale [1 ]
Caldwell, Marissa A. [1 ]
Kuzum, Duygu [1 ]
Wong, H. -S. Philip [1 ]
机构：
[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
来源：
2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8 - 3.4nm has been demonstrated. Highly scaled (<2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.
引用
收藏
页数：7
相关论文
共 50 条
  • [41] Phase change thin films for non-volatile memory applications
    Lotnyk, A.
    Behrens, M.
    Rauschenbach, B.
    NANOSCALE ADVANCES, 2019, 1 (10): : 3836 - 3857
  • [42] Trilayer Graphene as a Candidate Material for Phase-Change Memory Applications
    Atwa, Mohamed M.
    AlAskalany, Ahmed
    Elgammal, Karim
    Smith, Anderson D.
    Hammar, Mattias
    Ostling, Mikael
    MRS ADVANCES, 2016, 1 (20): : 1487 - 1494
  • [43] Si-Sb-Te materials for phase change memory applications
    Rao, Feng
    Song, Zhitang
    Ren, Kun
    Zhou, Xilin
    Cheng, Yan
    Wu, Liangcai
    Liu, Bo
    NANOTECHNOLOGY, 2011, 22 (14)
  • [44] RSAK: Random Stream AttacK for Phase Change Memory in Video Applications
    Fang, Yuntan
    Li, Huawei
    Li, Xiaowei
    2013 IEEE 31ST VLSI TEST SYMPOSIUM (VTS), 2013,
  • [45] Trilayer Graphene as a Candidate Material for Phase-Change Memory Applications
    Mohamed M Atwa
    Ahmed AlAskalany
    Karim Elgammal
    Anderson D Smith
    Mattias Hammar
    Mikael Östling
    MRS Advances, 2016, 1 (20) : 1487 - 1494
  • [46] Phase Change Memory Advanced Electrical Characterization for Conventional and Alternative Applications
    Toffoli, A.
    Suri, Manan
    Pemiola, L.
    Persico, A.
    Jahan, C.
    Nodin, J. F.
    Sousa, V.
    DeSalvo, B.
    Reimbold, G.
    2012 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES (ICMTS), 2012, : 114 - 118
  • [47] Crystallization kinetics of SnSe thin films for phase change memory applications
    Joshua M.Kundu
    Patrick M.Karimi
    Walter K.Njoroge
    Journal of Semiconductors, 2015, 36 (06) : 21 - 24
  • [48] Phase change memory
    Jing Li
    Chung Lam
    Science China Information Sciences, 2011, 54 : 1061 - 1072
  • [49] Phase Change Memory
    Wong, H. -S. Philip
    Raoux, Simone
    Kim, SangBum
    Liang, Jiale
    Reifenberg, John P.
    Rajendran, Bipin
    Asheghi, Mehdi
    Goodson, Kenneth E.
    PROCEEDINGS OF THE IEEE, 2010, 98 (12) : 2201 - 2227
  • [50] Phase Change Memory
    Breitwisch, Matthew J.
    PROCEEDINGS OF THE IEEE 2008 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, 2008, : 219 - 221
12345