Phase Change Memory: Scaling and Applications

被引：0

作者：

Jeyasingh, Rakesh ^{[1
]}

Liang, Jiale ^{[1
]}

Caldwell, Marissa A. ^{[1
]}

Kuzum, Duygu ^{[1
]}

Wong, H. -S. Philip ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

来源：

2012 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) | 2012年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase Change Memory (PCM) technology is a promising candidate for the future non-volatile memory applications. Scaling of PCM into the sub-10 nm regime has been demonstrated using novel applications of nanofabrication techniques. PCM devices using solution-processed GeTe nanoparticles of diameter range 1.8 - 3.4nm has been demonstrated. Highly scaled (<2nm) PCM cross-point device using carbon nanotube as the electrode is fabricated proving the scalability of PCM to ultra small dimensions. The use of PCM as a nanoelectronic synapse for neuromorphic computation is also demonstrated as an illustration of PCM application beyond digital memory.

引用

页数：7

共 50 条

[1] Analysis of temperature in phase change memory scaling
Kim, SangBum
Philip, H.-S.
IEEE ELECTRON DEVICE LETTERS, 2007, 28 (08) : 697 - 699
[2] Scaling properties of phase-change line memory
杜小锋
宋三年
宋志棠
刘卫丽
吕士龙
顾怡峰
薛维佳
席韡
Chinese Physics B, 2012, 21 (09) : 554 - 558
[3] Scaling analysis of phase-change memory technology
Pirovano, A
Lacaita, AL
Benvenuti, A
Pellizzer, F
Hudgens, S
Bez, R
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 699 - 702
[4] Scaling Analysis of Nanowire Phase-Change Memory
Liu, Jie
Yu, Bin
Anantram, M. P.
IEEE ELECTRON DEVICE LETTERS, 2011, 32 (10) : 1340 - 1342
[5] Phase change memory materials and their applications
Kozyukhin, Sergey A.
Lazarenko, Petr, I
Popov, Anatoliy, I
Eremenko, Igor L.
RUSSIAN CHEMICAL REVIEWS, 2022, 91 (09)
[6] Scaling properties of phase-change line memory
Du Xiao-Feng
Song San-Nian
Song Zhi-Tang
Liu Wei-Li
Lu Shi-Long
Gu Yi-Feng
Xue Wei-Jia
Xi Wei
CHINESE PHYSICS B, 2012, 21 (09)
[7] Scaling Analysis of Phase Change Memory (PCM) Driving Devices
Li, Lin
Chan, Mansun
EDSSC: 2008 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, 2008, : 272 - 275
[8] Towards Ultimate Scaling Limits of Phase-Change Memory
Xiong, F.
Yalon, E.
Behnam, A.
Neuman, C. M.
Grosse, K. L.
Deshmukh, S.
Pop, E.
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
[9] Constraints and resolution for phase change materials and memory device scaling
Hong Yang
Lin Yinyin
Ling Yun
Lai Lianzhang
Feng Jie
Lai Yunfeng
Qiao Baowei
Tang Tingao
Cai Bingchu
Chen Bomy
INTEGRATED FERROELECTRICS, 2006, 78 (153-163) : 153 - 163
[10] Phase-change memory: Science and applications
Kolobov, Alexander V.
Popescu, Mihai
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (10): : 1824 - 1826

← 1 2 3 4 5 →