Quasi-Balance Four-Terminal Resistance Bridge

被引：4

作者：

Lai, Lei ^{[1
]}

Feng, Jian ^{[1
]}

Shi, Leibing ^{[1
]}

机构：

[1] Shanghai Inst Measurement & Testing Technol, Shanghai 201203, Peoples R China

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 2015年 / 64卷 / 06期

关键词：

Bridge circuits; impedance measurement; lead voltage elimination; quasi-balance; resistance measurement; sampling method; voltage dividers;

D O I：

10.1109/TIM.2015.2408792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A kind of quasi-balance four-terminal ac resistance bridge has been constructed. The electronic inductive voltage divider provides high accurate voltage ratios for the bridge at a wide frequency range from 20 Hz to 10 kHz. The Wagner network with electronic circuit containing followers and amplifiers makes the voltage ratio unaffected by internal loading of ratio winding. Amplifiers are used to eliminate voltage drop on the lead wire connecting two resistors. Sampling method is used to measure the complex voltage ratio. The bridge can measure resistances from 1 Omega to 1 M Omega. The optimal uncertainty for resistance of 100 Omega and 1 k Omega is 2 x 10(-7) at 1 kHz.

引用

页码：1636 / 1641

页数：6

共 50 条

[21] Four-Terminal Pair Digital Sampling Impedance Bridge up to 1MHz
Maslan, Stanislav
Sira, Martin
Skalicka, Tereza
Bergsten, Tobias
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2019, 68 (06) : 1860 - 1869
[22] Comparing resistances of four-terminal resistors
Dowling, JJ
NATURE, 1939, 144 : 865 - 866
[23] Four-terminal FinFET device technology
Masahara, A.
Endo, K.
Liu, Y. X.
O'uchi, S.
Matsukawa, T.
Surdeanu, R.
Witters, L.
Doornbos, G.
Nguyen, V. H.
Van den Bosch, G.
Vrancken, C.
Jurczak, M.
Biesemans, S.
Suzuki, E.
2007 IEEE INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, PROCEEDINGS, 2007, : 55 - +
[24] Comparing resistances of four-terminal resistors
Gall, DC
NATURE, 1939, 144 : 982 - 982
[25] Non-quasi-static small signal model of four-terminal MOS transistors
Nitsu, Y
IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (12) : 1950 - 1960
[26] A new peak in the bend resistance of a four-terminal device written by FIB implantation
Diaconescu, D
Hoch, S
Heidtkamp, C
Meier, C
Reuter, D
Wieck, AD
PHYSICA B-CONDENSED MATTER, 2000, 284 : 1906 - 1907
[27] Four-terminal measurement of the distribution of electrical resistance across stress corrosion cracking
Yusa, Noritaka
Hashizume, Hidetoshi
NDT & E INTERNATIONAL, 2011, 44 (07) : 544 - 546
[28] Influence of the voltage contacts on the four-terminal quantized Hall resistance in the nonlinear regime
Jeckelmann, B
Jeanneret, B
IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1997, 46 (02) : 276 - 280
[29] Feedback controlled electromigration in four-terminal nanojunctions
Wu, Zheng Ming
Steinacher, M.
Huber, R.
Calame, M.
van der Molen, S. J.
Schoenenberger, C.
APPLIED PHYSICS LETTERS, 2007, 91 (05)
[30] A complementary pair of four-terminal silicon synapses
Diorio, C
Hasler, P
Minch, BA
Mead, C
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 1997, 13 (1-2) : 153 - 166

← 1 2 3 4 5 →