Various phase transitions in v=2/3 bilayer quantum Hall states

被引：1
|
作者：
Kumada, N [1 ]
Terasawa, D
Shimoda, Y
Azuhata, H
Sawada, A
Ezawa, ZF
Muraki, K
Saku, T
Hirayama, Y
机构：
[1] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan
[2] NTT Corp, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 12卷 / 1-4期
关键词：
fractional quantum Hall effect; GaAs/AlGaAs; bilayer system; composite fermion;
D O I：
10.1016/S1386-9477(01)00300-9
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We measured the magnetoresistance in bilayer quantum Hall (QH) state at fractional filling factor v Surprisingly, for different QH areas and two types of hysteresis were observed by controlling the total electron density and the density difference in two layers. Two QH areas and one type of hysteresis are novel characteristic of bilayer systems. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：32 / 35
页数：4
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