Structural and electronic properties of wide band gap Zn1-xMgxSe alloys

被引：6
|
作者：
Pelucchi, E [7 ]
Rubini, S
Bonanni, B
Franciosi, A
Zaoui, A
Peressi, M
Baldereschi, A
De Salvador, D
Berti, M
Drigo, A
Romanato, F
机构：
[1] Lab Nazl TASC INFM, I-34012 Trieste, Italy
[2] Univ Trieste, Dipartimento Fis Teor, INFM, I-34014 Trieste, Italy
[3] INFM, I-35131 Padua, Italy
[4] Dipartimento Fis G Galilei, I-35131 Padua, Italy
[5] Elettra Synchrotron, TASC INFM, I-34012 Trieste, Italy
[6] Univ Trieste, Dipartimento Fis, I-34127 Trieste, Italy
[7] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 08期
关键词：
D O I：
10.1063/1.1682688
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We determined the properties of Zn1-xMgxSe semiconductor alloys through a combination of optical and photoelectron spectroscopy, x-ray diffraction, Rutherford backscattering spectrometry, and ab initio pseudopotential calculations. The complementary character of the techniques and the good agreement between calculated and experimental trends allowed us to explain some of the discrepancies between the reported properties of these wide band gap alloys. (C) 2004 American Institute of Physics.
引用
收藏
页码：4184 / 4192
页数：9
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