Transient electron transport in the III-V compound semiconductors gallium arsenide and gallium nitride

被引：10
|
作者：
Hadi, Walid A. [1 ]
Cheekoori, Reddiprasad [2 ]
Shur, Michael S. [3 ]
O'Leary, Stephen K. [2 ]
机构：
[1] Univ Windsor, Dept Elect & Comp Engn, Windsor, ON N9B 3P4, Canada
[2] Univ British Columbia, Sch Engn, Kelowna, BC V1V 1V7, Canada
[3] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 02期
基金：
加拿大自然科学与工程研究理事会; 美国国家科学基金会;
关键词：
MONTE-CARLO CALCULATION; FIELD-EFFECT TRANSISTORS; WURTZITE INDIUM NITRIDE; STEADY-STATE; ZINC-OXIDE; GAN; SIMULATION; INN; CONDUCTIVITY; SENSITIVITY;
D O I：
10.1007/s10854-012-0818-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-valley Monte Carlo simulation approach is used for a detailed comparative analysis of the transient electron transport that occurs within bulk zinc blende gallium arsenide and bulk wurtzite gallium nitride. We find that in both cases that the electron drift velocity and the average electron energy field-dependent "settling times" are strongly correlated, and that the electric field resulting in the shortest electron transit-time is a function of the channel length. The calculated dependence of the peak transient electron drift velocity on the applied electric field can be used for the design optimization of short-channel high-frequency devices.
引用
收藏
页码：807 / 813
页数：7
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