Low-temperature synthesis of SiO2 insulator by ICP-CVD using tetramethylsilane

被引：0

作者：

Furuta, H. ^{[1
]}

Furuta, M. ^{[1
]}

Matsuda, T. ^{[1
]}

Hiramatsu, T. ^{[2
]}

Hirao, T. ^{[1
]}

机构：

[1] Kochi Univ Technol, Res Inst, 185 Miyanokuchi,Tosayamada Cho, Kami City, Kochi 7820003, Japan

[2] Kochi Casio, Kochi, Japan

来源：

IDW '06: PROCEEDINGS OF THE 13TH INTERNATIONAL DISPLAY WORKSHOPS, VOLS 1-3 | 2006年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiO2 insulator films were deposited at low temperature below 150 degrees C using organic silicon source of tetramethylsilane (4MS) and N2O precursor by ICP-CVD method. FT-IR absorption peaks of O-H stretch, Si-H stretch, Si-CH3 stretch were not observed in these SiO2 films. Refractive index of SiO2 films at 100 degrees C was 1.480. These results indicate that SiO2 insulator films can be obtained by high density plasma ICP-CVD using 4MS and N2O by increasing substrate temperature to 100 degrees C.

引用

页码：973 / +

页数：2

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