Interface Engineering in Organic Thin Film Transistors

被引：0

作者：

Liguori, R. ^{[1
]}

Fusco, S. ^{[1
]}

Rubino, A. ^{[1
]}

Usta, H. ^{[2
]}

Facchetti, A. ^{[3
,4
]}

机构：

[1] Univ Salerno, Dept Ind Engn, Via Giovanni Paolo 2,132, I-84084 Fisciano, SA, Italy

[2] Abdullah Gul Univ, Dept Mat Sci & Nanotechnol Engn, TR-38080 Kayseri, Turkey

[3] Flexterra Corp, Skokie, IL 60077 USA

[4] Northwestern Univ, Dept Chem, 2145 Sheridan Rd, Evanston, IL 60208 USA

来源：

2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION | 2017年

关键词：

organic thin-film transistors (OTFTs); semiconductor-insulator interfaces; semiconductor-metal interfaces; trap-limited charge transport; SEMICONDUCTOR; PENTACENE; CIRCUITS; CHARGE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel semiconductor, the small molecule C6-NTTN, was used to fabricate organic thin film transistors (OTFTs). Different architectures and deposition techniques were employed, together with various surface treatments of the substrate, insulator and metal contacts, whose effect is analyzed through atomic force microscopy. The aim is to investigate the relationship between the process parameters and the electrical performance, with a particular attention to the quality of interfaces between active layers. The proportionality between the charge carrier mobility and the interface trap density was studied.

引用

页码：143 / 146

页数：4

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