Measurement of the linewidth enhancement factor of a 1550-nm injection-locked quantum dash laser

被引：3
|
作者：
Dziak, C. [1 ]
Moscho, A. J. [1 ]
Li, Y. [1 ]
Fanto, M. [2 ]
Kovanis, V. [3 ]
Malowicki, J. [2 ]
Lester, L. F. [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, 1313 Goddard SE, Albuquerque, NM 87106 USA
[2] US Air Force, Res Lab, SNDP, Griffiss AFB, NY 13441 USA
[3] US Air Force, Res Lab, SNDP, Wright Patterson AFB, OH 45433 USA
来源：
2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/LEOS.2007.4382464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Injection-locking in quantum dash lasers is studied for the first time. A measurement of the linewidth enhancement factor from 1.2-8.6 is obtained by comparing the positive and negative detuning ranges of the stable locking regime.
引用
收藏
页码：433 / +
页数：2
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