Thermal imaging based on high-performance InAs/InP quantum-dot infrared photodetector operating at high temperature

被引：1
|
作者：
Razeghi, M. [1 ]
Lim, H. [1 ]
Tsao, S. [1 ]
Seo, H. [1 ]
Zbang, W. [1 ]
机构：
[1] Northwestern Univ, Dept Elect Engn & Comp Sci, Ctr Quantum Devices, Evanston, IL 60208 USA
来源：
2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 | 2007年
关键词：
D O I：
10.1109/LEOS.2007.4382251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a room temperature operating and high-performance InAs quantum-dot infrared photodetector on InP substrate and thermal imaging of 320x 256 focal plane array based on this device up to 200 K.
引用
收藏
页码：15 / 16
页数：2
相关论文
共 50 条
  • [21] Normal-incidence, high-temperature, mid-infrared, InAs-GaAs vertical quantum-dot infrared photodetector
    Stiff, AD
    Krishna, S
    Bhattacharya, P
    Kennerly, SW
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2001, 37 (11) : 1412 - 1419
  • [22] High-performance 1300-nm InAs/GaAs quantum-dot lasers
    Liu, H. Y.
    Hopkinson, M.
    Groom, K.
    Hogg, R. A.
    Mowbray, D. J.
    NOVEL IN-PLANE SEMICONDUCTOR LASERS VII, 2008, 6909
  • [23] Uniformly doped InAs/GaAs quantum-dot infrared photodetector structures
    Pal, D
    Towe, E
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (03): : 1132 - 1135
  • [24] Fabrication of a far-infrared photodetector based on InAs/GaAs quantum-dot superlattices
    Cheng, YC
    Yang, ST
    Yang, JN
    Lan, WH
    Chang, LB
    Hsieh, LZ
    OPTICAL ENGINEERING, 2003, 42 (01) : 119 - 123
  • [25] High-performance quantum-dot superluminescent diodes
    Zhang, ZY
    Wang, ZG
    Xu, B
    Jin, P
    Sun, ZZ
    Liu, FQ
    IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (01) : 27 - 29
  • [26] High-performance 1.52 μm InAs/InP quantum dot distributed feedback laser
    Lu, Z. G.
    Poole, P. J.
    Liu, J. R.
    Barrios, P. J.
    Jiao, Z. J.
    Pakulski, G.
    Poitras, D.
    Goodchild, D.
    Rioux, B.
    SpringThorpe, A. J.
    ELECTRONICS LETTERS, 2011, 47 (14) : 818 - U108
  • [27] High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature
    Asgari, A.
    Razi, S.
    OPTICS EXPRESS, 2010, 18 (14): : 14604 - 14615
  • [28] High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector
    Chakrabarti, S
    Stiff-Roberts, AD
    Bhattacharya, PB
    Kennerly, SW
    ELECTRONICS LETTERS, 2004, 40 (03) : 197 - 198
  • [29] High performance external cavity InAs/InP quantum dot lasers
    Chen, P.
    Gong, Q.
    Cao, C. F.
    Li, S. G.
    Wang, Y.
    Liu, Q. B.
    Yue, L.
    Zhang, Y. G.
    Feng, S. L.
    Ma, C. H.
    Wang, H. L.
    APPLIED PHYSICS LETTERS, 2011, 98 (12)
  • [30] High-performance infrared photodetector based on InAs/GaAs submonolayer quantum dots grown at high temperature with a (2x4) surface reconstruction
    Alzeidan, A.
    Cantalice, T. F.
    Sautter, K. E.
    Vallejo, K. D.
    Simmonds, P. J.
    Quivy, A. A.
    SENSORS AND ACTUATORS A-PHYSICAL, 2024, 374
12345